{Asar Amirka na haɓaka kayan semiconductor tare da haɓakar zafi mai girma don murkushe dumama guntu.
Tare da karuwa a cikin adadin transistor a cikin guntu, aikin na'ura na kwamfuta yana ci gaba da ingantawa, amma haɓakar haɓaka kuma yana haifar da wurare masu zafi da yawa.
Ba tare da ingantacciyar fasahar sarrafa zafin jiki ba, baya ga rage saurin aiki na na'ura da rage dogaro, akwai kuma dalilai na Hana zafi fiye da kima kuma yana buƙatar ƙarin makamashi, haifar da matsalolin rashin ƙarfi na makamashi.Domin magance wannan matsala, Jami'ar California, Los Angeles ta ƙirƙira wani sabon abu na semiconductor tare da madaidaicin zafin jiki a cikin 2018, wanda ya ƙunshi boron arsenide mara lahani da boron phosphide, wanda yayi kama da kayan watsar da zafi kamar su. Diamond da silicon carbide.rabo, tare da fiye da sau 3 da thermal watsin.
A cikin Yuni 2021, Jami'ar California, Los Angeles, ta yi amfani da sabbin kayan aikin semiconductor don haɗawa da kwakwalwan kwamfuta masu ƙarfi don samun nasarar murkushe haɓakar zafi na kwakwalwan kwamfuta, don haka inganta aikin kwamfuta.Tawagar masu binciken sun sanya na'ura mai kwakwalwa ta boron arsenide a tsakanin guntu da na'ura mai zafi a matsayin hade da na'ura mai zafi da kuma guntu don inganta tasirin zafi, kuma sun gudanar da bincike kan aikin sarrafa zafin jiki na ainihin na'urar.
Bayan daure sinadarin boron arsenide zuwa gap din makamashi mai fadi ga gallium nitride semiconductor, an tabbatar da cewa karfin wutar lantarki na gallium nitride/boron arsenide interface ya kai 250 MW/m2K, kuma juriyar yanayin zafi ya kai wani karamin matsayi.Ana kara hada sinadarin boron arsenide tare da wani ci gaba mai girma electron motsi transistor guntu wanda ya hada da aluminum gallium nitride/gallium nitride, kuma an tabbatar da cewa tasirin zafi ya fi na lu'u-lu'u ko siliki carbide.
Ƙungiyar binciken ta yi amfani da guntu a matsakaicin iya aiki, kuma ta auna wurin zafi daga zafin jiki zuwa mafi girman zafin jiki.Sakamakon gwaje-gwajen ya nuna cewa zafin zafin lu'u-lu'u yana da 137 ° C, na'urar zafi na silicon carbide shine 167 ° C, da kuma zafin boron arsenide yana da 87 ° C kawai.Kyakkyawan kyakyawan yanayin zafi na wannan keɓancewa ya fito ne daga keɓaɓɓen tsarin phononic band na boron arsenide da haɗin haɗin haɗin.Abun arsenide na boron ba kawai yana da haɓakar zafin zafi ba, har ma yana da ƙaramin juriya na zafin jiki.
Ana iya amfani da shi azaman matattarar zafi don cimma ƙarfin aiki mafi girma na na'ura.Ana sa ran za a yi amfani da shi ta hanyar sadarwa mai nisa, mai ƙarfi mai ƙarfi a nan gaba.Ana iya amfani da shi a fagen babban mitar lantarki ko marufi na lantarki.
Lokacin aikawa: Agusta-08-2022